RJK0454DPB Datasheet. Specs and Replacement

Type Designator: RJK0454DPB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: LFPAK

RJK0454DPB substitution

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RJK0454DPB datasheet

 0.1. Size:129K  renesas
rej03g1877 rjk0454dpbds.pdf pdf_icon

RJK0454DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:81K  renesas
r07ds0073ej rjk0451dpb.pdf pdf_icon

RJK0454DPB

Preliminary Datasheet RJK0451DPB R07DS0073EJ0102 (Previous REJ03G1763-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack... See More ⇒

 8.2. Size:132K  renesas
rej03g1879 rjk0456dpbds.pdf pdf_icon

RJK0454DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.3. Size:81K  renesas
r07ds0075ej rjk0453dpb.pdf pdf_icon

RJK0454DPB

Preliminary Datasheet RJK0453DPB R07DS0075EJ0102 (Previous REJ03G1762-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 1.9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack... See More ⇒

Detailed specifications: RJK03F6DNS, RJK03F7DNS, RJK03F8DNS, RJK03F9DNS, RJK03H1DPA, RJK0451DPB, RJK0452DPB, RJK0453DPB, 7N60, RJK0455DPB, RJK0456DPB, RJK0629DPE, RJK0629DPK, RJK0629DPN, RJK0651DPB, RJK0652DPB, RJK0653DPB

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