Справочник MOSFET. RJK0454DPB

 

RJK0454DPB Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: RJK0454DPB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
   Тип корпуса: LFPAK
     - подбор MOSFET транзистора по параметрам

 

RJK0454DPB Datasheet (PDF)

 0.1. Size:129K  renesas
rej03g1877 rjk0454dpbds.pdfpdf_icon

RJK0454DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:81K  renesas
r07ds0073ej rjk0451dpb.pdfpdf_icon

RJK0454DPB

Preliminary Datasheet RJK0451DPB R07DS0073EJ0102(Previous: REJ03G1763-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 8.2. Size:132K  renesas
rej03g1879 rjk0456dpbds.pdfpdf_icon

RJK0454DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:81K  renesas
r07ds0075ej rjk0453dpb.pdfpdf_icon

RJK0454DPB

Preliminary Datasheet RJK0453DPB R07DS0075EJ0102(Previous: REJ03G1762-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 1.9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

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History: SIHFU420A | SSM3J338R | VBZFB20N06 | ME85P03-G | IXFT26N50

 

 
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