BUZ63 MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ63
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
Package: TO3
BUZ63 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ63 Datasheet (PDF)
1.1. buz63.pdf 
Size:223K _inchange_semiconductor
isc N-Channel Mosfet Transistor BUZ63 ·FEATURES ·5.9A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters,
Datasheet: BUZ50A-TO220M , BUZ50B , BUZ50B-220M , BUZ50B-220SM , BUZ50BSM , BUZ50B-TO220M , BUZ60 , BUZ60B , IRFP4332 , BUZ64 , BUZ71 , BUZ71A , BUZ71AFI , BUZ71FI , BUZ72A , BUZ74 , BUZ74A .
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MOSFET: IPP45N04S4L-08 | IPI45N04S4L-08 | IPP12CNE8NG | IPI12CNE8NG | IPD12CNE8NG | IPP08CNE8NG | IPI08CNE8NG | IPI06CN10NG | IPP054NE8NG | IPI05CNE8NG | IPP050N06NG | SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F |