All MOSFET. BUZ63 Datasheet

 

BUZ63 Datasheet and Replacement


   Type Designator: BUZ63
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO3
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BUZ63 Datasheet (PDF)

 ..1. Size:223K  inchange semiconductor
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BUZ63

isc N-Channel Mosfet Transistor BUZ63FEATURES5.9A, 400VSOA is Power Dissipation LimitedNanosecond Switching SpeedsLinear Transfer CharacteristicsHigh Input ImpedanceMajority Carrier DeviceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters,

Datasheet: BUZ50A-TO220M , BUZ50B , BUZ50B-220M , BUZ50B-220SM , BUZ50BSM , BUZ50B-TO220M , BUZ60 , BUZ60B , K4145 , BUZ64 , BUZ71 , BUZ71A , BUZ71AFI , BUZ71FI , BUZ72A , BUZ74 , BUZ74A .

History: AP09N70R | DMNH10H028SCT | WML11N80M3 | SWP10N50K | MTP3055AFI | VBQA2309 | IRLS4030

Keywords - BUZ63 MOSFET datasheet

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