All MOSFET. BUZ63 Datasheet

 

BUZ63 MOSFET. Datasheet pdf. Equivalent

Type Designator: BUZ63

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO3

BUZ63 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ63 Datasheet (PDF)

1.1. buz63.pdf Size:223K _inchange_semiconductor

BUZ63
BUZ63

isc N-Channel Mosfet Transistor BUZ63 ·FEATURES ·5.9A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters,

Datasheet: BUZ50A-TO220M , BUZ50B , BUZ50B-220M , BUZ50B-220SM , BUZ50BSM , BUZ50B-TO220M , BUZ60 , BUZ60B , IRFP4332 , BUZ64 , BUZ71 , BUZ71A , BUZ71AFI , BUZ71FI , BUZ72A , BUZ74 , BUZ74A .

 

 
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