BUZ64 MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ64
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3
BUZ64 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ64 Datasheet (PDF)
buz64.pdf
isc N-Channel Mosfet Transistor BUZ64FEATURES11.5A, 400VSOA is Power Dissipation LimitedNanosecond Switching SpeedsLinear Transfer CharacteristicsHigh Input ImpedanceMajority Carrier DeviceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters
Datasheet: BUZ50B , BUZ50B-220M , BUZ50B-220SM , BUZ50BSM , BUZ50B-TO220M , BUZ60 , BUZ60B , BUZ63 , STP80NF70 , BUZ71 , BUZ71A , BUZ71AFI , BUZ71FI , BUZ72A , BUZ74 , BUZ74A , BUZ76 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918