RJK0853DPB MOSFET PDF: N-Ch, 80V, 40A. Datasheet. Full specification with pinout and replacement list

RJK0853DPB Specs and Replacement

   Type Designator: RJK0853DPB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: LFPAK

RJK0853DPB substitution

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RJK0853DPB datasheet

..1. Size:81K renesas
r07ds0081ej rjk0853dpb.pdf pdf_icon

Preliminary Datasheet RJK0853DPB R07DS0081EJ0202 (Previous REJ03G1772-0201) Silicon N Channel Power MOS FET Rev.2.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 6.2 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag... See More ⇒

8.1. Size:180K renesas
rej03g1885 rjk0856dpbds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

8.2. Size:81K renesas
r07ds0080ej rjk0852dpb.pdf pdf_icon

Preliminary Datasheet RJK0852DPB R07DS0080EJ0102 (Previous REJ03G1774-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag... See More ⇒

8.3. Size:81K renesas
r07ds0079ej rjk0851dpb.pdf pdf_icon

Preliminary Datasheet RJK0851DPB R07DS0079EJ0102 (Previous REJ03G1773-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Functions High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 18 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack... See More ⇒