RJK0853DPB datasheet, аналоги, основные параметры

Наименование производителя: RJK0853DPB

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 65 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm

Тип корпуса: LFPAK

Аналог (замена) для RJK0853DPB

- подборⓘ MOSFET транзистора по параметрам

 

RJK0853DPB даташит

 ..1. Size:81K  renesas
r07ds0081ej rjk0853dpb.pdfpdf_icon

RJK0853DPB

Preliminary Datasheet RJK0853DPB R07DS0081EJ0202 (Previous REJ03G1772-0201) Silicon N Channel Power MOS FET Rev.2.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 6.2 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

 8.1. Size:180K  renesas
rej03g1885 rjk0856dpbds.pdfpdf_icon

RJK0853DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:81K  renesas
r07ds0080ej rjk0852dpb.pdfpdf_icon

RJK0853DPB

Preliminary Datasheet RJK0852DPB R07DS0080EJ0102 (Previous REJ03G1774-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

 8.3. Size:81K  renesas
r07ds0079ej rjk0851dpb.pdfpdf_icon

RJK0853DPB

Preliminary Datasheet RJK0851DPB R07DS0079EJ0102 (Previous REJ03G1773-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Functions High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 18 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

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