RJK1055DPB Datasheet. Specs and Replacement

Type Designator: RJK1055DPB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: LFPAK

RJK1055DPB substitution

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RJK1055DPB datasheet

 0.1. Size:180K  renesas
 rej03g1887 rjk1055dpbds.pdf pdf_icon

RJK1055DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:109K  renesas
 r07ds0093ej rjk1054dpb.pdf pdf_icon

RJK1055DPB

Preliminary Datasheet RJK1054DPB R07DS0093EJ0200 (Previous REJ03G1886-0100) Silicon N Channel Power MOS FET Rev.2.00 Power Switching Aug 17, 2010 Features High speed switching Pb-free Low drive current Halogen-free Low on-resistance High density mounting RDS(on) = 17 m typ. (at VGS = 10 V) Outline RENESAS Package code PTZZ0005DA-A (Pack... See More ⇒

 8.2. Size:81K  renesas
 r07ds0083ej rjk1052dpb.pdf pdf_icon

RJK1055DPB

Preliminary Datasheet RJK1052DPB R07DS0083EJ0102 (Previous REJ03G1769-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 15 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa... See More ⇒

 8.3. Size:81K  renesas
 r07ds0082ej rjk1051dpb.pdf pdf_icon

RJK1055DPB

Preliminary Datasheet RJK1051DPB R07DS0082EJ0102 (Previous REJ03G1768-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 30 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Package... See More ⇒

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Detailed specifications: RJK1021DPN, RJK1028DNS, RJK1028DPA, RJK1028DSP, RJK1051DPB, RJK1052DPB, RJK1053DPB, RJK1054DPB, AO3400, RJK1056DPB, RJK1211DNS, RJK1211DPA, RJK1212DNS, RJK1212DPA, RJK1525DPE, RJK1525DPF, RJK1526DPE

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.