Справочник MOSFET. RJK1055DPB

 

RJK1055DPB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK1055DPB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для RJK1055DPB

 

 

RJK1055DPB Datasheet (PDF)

 0.1. Size:180K  renesas
 rej03g1887 rjk1055dpbds.pdf

RJK1055DPB RJK1055DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:109K  renesas
 r07ds0093ej rjk1054dpb.pdf

RJK1055DPB RJK1055DPB

Preliminary Datasheet RJK1054DPB R07DS0093EJ0200(Previous: REJ03G1886-0100)Silicon N Channel Power MOS FET Rev.2.00Power Switching Aug 17, 2010Features High speed switching Pb-free Low drive current Halogen-free Low on-resistance High density mounting RDS(on) = 17 m typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A(Pack

 8.2. Size:81K  renesas
 r07ds0083ej rjk1052dpb.pdf

RJK1055DPB RJK1055DPB

Preliminary Datasheet RJK1052DPB R07DS0083EJ0102(Previous: REJ03G1769-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 15 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

 8.3. Size:81K  renesas
 r07ds0082ej rjk1051dpb.pdf

RJK1055DPB RJK1055DPB

Preliminary Datasheet RJK1051DPB R07DS0082EJ0102(Previous: REJ03G1768-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 30 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Package

 8.4. Size:179K  renesas
 rej03g1888 rjk1056dpbds.pdf

RJK1055DPB RJK1055DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:81K  renesas
 r07ds0084ej rjk1053dpb.pdf

RJK1055DPB RJK1055DPB

Preliminary Datasheet RJK1053DPB R07DS0084EJ0102(Previous: REJ03G1770-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 10 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

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