RJK4002DPP-M0
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK4002DPP-M0
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.9
Ohm
Package:
TO220FL
RJK4002DPP-M0
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK4002DPP-M0
Datasheet (PDF)
4.1. Size:78K renesas
r07ds0551ej rjk4002dpp.pdf 
Preliminary Datasheet RJK4002DPP-M0 R07DS0551EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Oct 03, 2011Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbso
5.1. Size:94K renesas
rjk4002dpd.pdf
Preliminary Datasheet RJK4002DPD R07DS0835EJ0210400V - 3A - MOS FET Rev.2.10High Speed Power Switching Jan 29, 2014Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source1
6.1. Size:84K renesas
rjk4002dje.pdf
Preliminary Datasheet RJK4002DJE R07DS0842EJ0200400V - 3A - MOS FET Rev.2.00High Speed Power Switching Aug 03, 2012Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321Absolute Max
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