RJK4512DPE Datasheet. Specs and Replacement

Type Designator: RJK4512DPE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm

Package: LDPAK

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RJK4512DPE datasheet

 0.1. Size:88K  renesas
rej03g1540 rjk4512dpeds.pdf pdf_icon

RJK4512DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.1. Size:94K  renesas
rjk4512dpp-e0.pdf pdf_icon

RJK4512DPE

Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100 450V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 0.43 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 ... See More ⇒

 8.1. Size:78K  renesas
r07ds0132ej rjk4518dpk.pdf pdf_icon

RJK4512DPE

Preliminary Datasheet RJK4518DPK R07DS0132EJ0200 (Previous REJ03G1529-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Sep 08, 2010 Features Low on-resistance RDS(on) = 0.11 typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Ga... See More ⇒

 8.2. Size:206K  renesas
rej03g1514 rjk4514dpkds.pdf pdf_icon

RJK4512DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: RJK4006DPD, RJK4006DPP-M0, RJK4007DPP-M0, RJK4012DPE, RJK4013DPE, RJK4014DPK, RJK4015DPK, RJK4018DPK, CS150N04A8, RJK4513DPE, RJK4514DPK, RJK4515DPK, RJK4518DPK, RJK5003DPD, RJK5006DPD, RJK5012DPE, RJK5012DPP-M0

Keywords - RJK4512DPE MOSFET specs

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