All MOSFET. RJK4515DPK Datasheet

 

RJK4515DPK MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK4515DPK

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 450 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 61.8 nC

Rise Time (tr): 65 nS

Drain-Source Capacitance (Cd): 283 pF

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO3P

RJK4515DPK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK4515DPK Datasheet (PDF)

0.1. rej03g1869 rjk4515dpkds.pdf Size:94K _renesas

RJK4515DPK
RJK4515DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. rjk4512dpp-e0.pdf Size:94K _renesas

RJK4515DPK
RJK4515DPK

 Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100 450V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features  Low on-resistance RDS(on) = 0.43  typ. (at ID = 7 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain G 3. Source 1

8.2. rej03g1586 rjk4513dpeds.pdf Size:92K _renesas

RJK4515DPK
RJK4515DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. rej03g1540 rjk4512dpeds.pdf Size:88K _renesas

RJK4515DPK
RJK4515DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. r07ds0132ej rjk4518dpk.pdf Size:78K _renesas

RJK4515DPK
RJK4515DPK

 Preliminary Datasheet RJK4518DPK R07DS0132EJ0200 (Previous: REJ03G1529-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Sep 08, 2010 Features  Low on-resistance RDS(on) = 0.11  typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D 1. Ga

 8.5. rej03g1514 rjk4514dpkds.pdf Size:206K _renesas

RJK4515DPK
RJK4515DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: RJK4012DPE , RJK4013DPE , RJK4014DPK , RJK4015DPK , RJK4018DPK , RJK4512DPE , RJK4513DPE , RJK4514DPK , IRF640N , RJK4518DPK , RJK5003DPD , RJK5006DPD , RJK5012DPE , RJK5012DPP-M0 , RJK5013DPE , RJK5013DPK , RJK5014DPK .

 

 
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