All MOSFET. RJK5012DPP-M0 Datasheet

 

RJK5012DPP-M0 MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK5012DPP-M0

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 29 nC

Rise Time (tr): 23 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.62 Ohm

Package: TO220FL

RJK5012DPP-M0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK5012DPP-M0 Datasheet (PDF)

4.1. r07ds0421ej rjk5012dpp.pdf Size:108K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

 Preliminary Datasheet RJK5012DPP-M0 R07DS0421EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 31, 2011 Features • Low on-resistance RDS(on) = 0.515 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source

5.1. rej03g1487 rjk5012dpeds.pdf Size:83K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

 Preliminary Datasheet RJK5012DPE REJ03G1487-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 12, 2010 Features  Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. S

 8.1. rjk5013dpp-e0.pdf Size:80K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

 Preliminary Datasheet RJK5013DPP-E0 R07DS0606EJ0100 500V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 29, 2012 Features  Low on-resistance RDS(on) = 0.385  typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain G 3. Source

8.2. rjk5014dpp.pdf Size:208K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. rej03g1753 rjk5015dpmds.pdf Size:92K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. rej03g1491 rjk5013dpkds.pdf Size:119K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. rej03g1457 rjk5018dpkds.pdf Size:119K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.6. rej03g1360 rjk5015dpkds.pdf Size:82K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

 Preliminary Datasheet RJK5015DPK REJ03G1360-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features  Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item S

8.7. rej03g1458 rjk5014dpkds.pdf Size:119K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.8. rjk5014dpp-e0.pdf Size:79K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

 Preliminary Datasheet RJK5014DPP-E0 R07DS0607EJ0100 500V - 19A - MOS FET Rev.1.00 High Speed Power Switching Feb 03, 2012 Features  Low on-resistance RDS(on) = 0.325  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain G 3. Source

8.9. r07ds0487ej rjk5013dpe.pdf Size:83K _renesas

RJK5012DPP-M0
RJK5012DPP-M0

 Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous: REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features  Low on-resistance RDS(on) = 0. 385  typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )

Datasheet: RJK4512DPE , RJK4513DPE , RJK4514DPK , RJK4515DPK , RJK4518DPK , RJK5003DPD , RJK5006DPD , RJK5012DPE , IRFZ44A , RJK5013DPE , RJK5013DPK , RJK5014DPK , RJK5015DPK , RJK5015DPM , RJK5018DPK , RJK5020DPK , RJK5026DPE .

 

 
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