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RJK5013DPE Spec and Replacement


   Type Designator: RJK5013DPE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.465 Ohm
   Package: LDPAK

 RJK5013DPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK5013DPE Specs

 ..1. Size:83K  renesas
r07ds0487ej rjk5013dpe.pdf pdf_icon

RJK5013DPE

Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) ... See More ⇒

 5.1. Size:119K  renesas
rej03g1491 rjk5013dpkds.pdf pdf_icon

RJK5013DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.2. Size:80K  renesas
rjk5013dpp-e0.pdf pdf_icon

RJK5013DPE

Preliminary Datasheet RJK5013DPP-E0 R07DS0606EJ0100 500V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 29, 2012 Features Low on-resistance RDS(on) = 0.385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source ... See More ⇒

 8.1. Size:108K  renesas
r07ds0421ej rjk5012dpp.pdf pdf_icon

RJK5013DPE

Preliminary Datasheet RJK5012DPP-M0 R07DS0421EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 31, 2011 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source... See More ⇒

Detailed specifications: RJK4513DPE , RJK4514DPK , RJK4515DPK , RJK4518DPK , RJK5003DPD , RJK5006DPD , RJK5012DPE , RJK5012DPP-M0 , AO3407 , RJK5013DPK , RJK5014DPK , RJK5015DPK , RJK5015DPM , RJK5018DPK , RJK5020DPK , RJK5026DPE , RJK5026DPP-M0 .

History: RJL5012DPP | IXTP26P10T

Keywords - RJK5013DPE MOSFET specs

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