Preliminary Datasheet RJK5013DPE R07DS0487EJ0300(Previous: REJ03G1488-0200)Silicon N Channel MOS FET Rev.3.00Jun 29, 2011High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK5013DPP-E0 R07DS0606EJ0100500V - 14A - MOS FET Rev.1.00High Speed Power Switching Feb 29, 2012Features Low on-resistance RDS(on) = 0.385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source

Preliminary Datasheet RJK5012DPP-M0 R07DS0421EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 31, 2011Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK5014DPP-E0 R07DS0607EJ0100500V - 19A - MOS FET Rev.1.00High Speed Power Switching Feb 03, 2012Features Low on-resistance RDS(on) = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source

Preliminary Datasheet RJK5012DPE REJ03G1487-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching May 12, 2010Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK5015DPK REJ03G1360-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Gate2. Drain (Flange)G3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item S