RJK5015DPM PDF and Equivalents Search

 

RJK5015DPM PDF Specs and Replacement


   Type Designator: RJK5015DPM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO3PFM
 

 RJK5015DPM substitution

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RJK5015DPM PDF Specs

 0.1. Size:92K  renesas
rej03g1753 rjk5015dpmds.pdf pdf_icon

RJK5015DPM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.1. Size:82K  renesas
rej03g1360 rjk5015dpkds.pdf pdf_icon

RJK5015DPM

Preliminary Datasheet RJK5015DPK REJ03G1360-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item S... See More ⇒

 8.1. Size:83K  renesas
r07ds0487ej rjk5013dpe.pdf pdf_icon

RJK5015DPM

Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) ... See More ⇒

 8.2. Size:108K  renesas
r07ds0421ej rjk5012dpp.pdf pdf_icon

RJK5015DPM

Preliminary Datasheet RJK5012DPP-M0 R07DS0421EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 31, 2011 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source... See More ⇒

Detailed specifications: RJK5003DPD , RJK5006DPD , RJK5012DPE , RJK5012DPP-M0 , RJK5013DPE , RJK5013DPK , RJK5014DPK , RJK5015DPK , IRF2807 , RJK5018DPK , RJK5020DPK , RJK5026DPE , RJK5026DPP-M0 , RJK5030DPD , RJK5030DPP-M0 , RJK5031DPD , RJK5033DPD .

Keywords - RJK5015DPM MOSFET specs

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