All MOSFET. RJK5026DPE Equivalents Search

Preliminary Datasheet RJK5026DPE R07DS0494EJ0200 (Previous REJ03G1852-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 21, 2011 Features Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D ... See More ⇒

Preliminary Datasheet RJK5026DPP-M0 R07DS0422EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source ... See More ⇒

Preliminary Datasheet RJK5020DPK REJ03G1263-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item... See More ⇒

Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) ... See More ⇒

Preliminary Datasheet RJK5031DPD R07DS0417EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 23, 2011 Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S... See More ⇒

Preliminary Datasheet RJK5012DPP-M0 R07DS0421EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 31, 2011 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source... See More ⇒

Preliminary Datasheet RJK5033DPD R07DS0179EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 05, 2010 Features Low on-state resistance RDS(on) = 0.96 typ. (ID = 3 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Datasheet RJK5033DPP-M0 R07DS0205EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Nov 29, 2010 Features Low on-state resistance RDS(on) = 0.96 typ. (at ID = 3 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absol... See More ⇒

Preliminary Datasheet RJK5003DPD R07DS0049EJ0400 (Previous REJ03G0580-0300) Silicon N Channel Power MOS FET Rev.4.00 High Speed Power Switching Use Jul 22, 2010 Features VDSS 500 V RDS(on) 1.5 (MAX.) ID 5 A Surface mount package (MP-3A) Outline RENESAS Package code PRSS0004ZG-A 2, 4 (Package name MP-3A) 4 1. Gate 2. Drain 1 3. Source... See More ⇒

Preliminary Datasheet RJK5030DPP-M0 R07DS0227EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolu... See More ⇒

Preliminary Datasheet RJK5032DPH-E0 R07DS1039EJ0100 500V - 3A - MOS FET Rev.1.00 High Speed Power Switching Mar 15, 2013 Features Low on-state resistance RDS(on) = 2.1 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source... See More ⇒

Preliminary Datasheet RJK5030DPD R07DS0050EJ0200 (Previous REJ03G1913-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2010 Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3.... See More ⇒

Preliminary Datasheet RJK5032DPD R07DS0836EJ0200 500V - 3A - MOS FET Rev.2.00 High Speed Power Switching Aug 08, 2012 Features Low on-state resistance RDS(on) = 2.1 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Datasheet RJK5014DPP-E0 R07DS0607EJ0100 500V - 19A - MOS FET Rev.1.00 High Speed Power Switching Feb 03, 2012 Features Low on-resistance RDS(on) = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source... See More ⇒

Preliminary Datasheet RJK5002DPD R07DS0866EJ0100 500V - 2.4A - MOS FET Rev.1.00 High Speed Power Switching Aug 08, 2012 Features Low on-state resistance RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S ... See More ⇒

Preliminary Datasheet RJK5013DPP-E0 R07DS0606EJ0100 500V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 29, 2012 Features Low on-resistance RDS(on) = 0.385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source ... See More ⇒

Preliminary Datasheet RJK5012DPE REJ03G1487-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 12, 2010 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. S... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Datasheet RJK5002DJE R07DS0844EJ0100 500V - 2.4A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2012 Features Low on-state resistance RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1 Absolute Ma... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Datasheet RJK5015DPK REJ03G1360-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item S... See More ⇒