RJK6022DJE Datasheet. Specs and Replacement

Type Designator: RJK6022DJE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm

Package: TO92MOD

RJK6022DJE substitution

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RJK6022DJE datasheet

 0.1. Size:116K  renesas
rej03g1484 rjk6022djeds.pdf pdf_icon

RJK6022DJE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:91K  renesas
rej03g1870 rjk6025dpeds.pdf pdf_icon

RJK6022DJE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:98K  renesas
r07ds0424ej rjk6024dpe.pdf pdf_icon

RJK6022DJE

Preliminary Datasheet RJK6024DPE R07DS0424EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 06, 2011 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Sourc... See More ⇒

 8.3. Size:136K  renesas
rjk6024dp3-a0.pdf pdf_icon

RJK6022DJE

Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100 600 V - 0.4 A - MOS FET Rev.1.00 High Speed Power Switching Aug 23, 2013 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSP0004ZB-A (Package name SOT-223) D 4 1. Gate 2. Drain G 3 3. Sourc... See More ⇒

Detailed specifications: RJK6012DPE, RJK6013DPE, RJK6014DPK, RJK6015DPK, RJK6015DPM, RJK6018DPK, RJK6018DPM, RJK6020DPK, MMIS60R580P, RJK6024DPD, RJK6024DPE, RJK6025DPD, RJK6025DPE, RJK6026DPE, RJK6029DJA, RJK6034DPD-E0, RJK6052DPP-M0

Keywords - RJK6022DJE MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs