RJK6022DJE datasheet, аналоги, основные параметры
Наименование производителя: RJK6022DJE
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.9 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 13 Ohm
Тип корпуса: TO92MOD
Аналог (замена) для RJK6022DJE
- подборⓘ MOSFET транзистора по параметрам
RJK6022DJE даташит
rej03g1484 rjk6022djeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1870 rjk6025dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0424ej rjk6024dpe.pdf
Preliminary Datasheet RJK6024DPE R07DS0424EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 06, 2011 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Sourc
rjk6024dp3-a0.pdf
Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100 600 V - 0.4 A - MOS FET Rev.1.00 High Speed Power Switching Aug 23, 2013 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSP0004ZB-A (Package name SOT-223) D 4 1. Gate 2. Drain G 3 3. Sourc
Другие IGBT... RJK6012DPE, RJK6013DPE, RJK6014DPK, RJK6015DPK, RJK6015DPM, RJK6018DPK, RJK6018DPM, RJK6020DPK, MMIS60R580P, RJK6024DPD, RJK6024DPE, RJK6025DPD, RJK6025DPE, RJK6026DPE, RJK6029DJA, RJK6034DPD-E0, RJK6052DPP-M0
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: ASDM7002EZA | ASDM68N80KQ | ASDM6802ZC | ASDM60R042NQ | ASDM60P12KQ | ASDM60N80KQ | ASDM60N70Q | ASDM60N50KQ | ASDM60N45KQ | ASDM60N30KQ | ASDM540G | ASDM4976S | ASDM4606S | ASDM40R009NQ | ASDM40N80KQ | ASDM40N60KQ
Popular searches
2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet | irfp250m | 2sk1058 | ss8550 | mje15033










