RJL5012DPE PDF and Equivalents Search

 

RJL5012DPE Specs and Replacement

Type Designator: RJL5012DPE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 115 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: LDPAK

RJL5012DPE substitution

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RJL5012DPE datasheet

 ..1. Size:80K  renesas
 r07ds0435ej rjl5012dpe.pdf pdf_icon

RJL5012DPE

Preliminary Datasheet RJL5012DPE R07DS0435EJ0200 (Previous REJ03G1745-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 14, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-... See More ⇒

 5.1. Size:204K  renesas
 rjl5012dpp.pdf pdf_icon

RJL5012DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.2. Size:93K  renesas
 rjl5012dpp-m0.pdf pdf_icon

RJL5012DPE

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) ... See More ⇒

 5.3. Size:99K  renesas
 r07ds0419ej rjl5012dpp.pdf pdf_icon

RJL5012DPE

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) ... See More ⇒

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Detailed specifications: RJK6026DPE , RJK6029DJA , RJK6034DPD-E0 , RJK6052DPP-M0 , RJK6053DPP-M0 , RJK6054DPP-M0 , RJK6066DPP-M0 , RJK60S5DPK-M0 , IRF540 , RJL5012DPP-M0 , RJL5013DPE , RJL5014DPK , RJL5015DPK , RJL5018DPK , RJL5020DPK , RJL5032DPP-M0 , RJL6012DPE .

Keywords - RJL5012DPE MOSFET specs

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