All MOSFET. RJL5012DPE Datasheet

 

RJL5012DPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: RJL5012DPE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27.8 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: LDPAK

 RJL5012DPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJL5012DPE Datasheet (PDF)

 ..1. Size:80K  renesas
 r07ds0435ej rjl5012dpe.pdf

RJL5012DPE RJL5012DPE

Preliminary Datasheet RJL5012DPE R07DS0435EJ0200(Previous: REJ03G1745-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 14, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-

 5.1. Size:204K  renesas
 rjl5012dpp.pdf

RJL5012DPE RJL5012DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.2. Size:93K  renesas
 rjl5012dpp-m0.pdf

RJL5012DPE RJL5012DPE

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 26, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)

 5.3. Size:99K  renesas
 r07ds0419ej rjl5012dpp.pdf

RJL5012DPE RJL5012DPE

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 26, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FSS23AOD | IXFP4N100Q

 

 
Back to Top