RQJ0204XGDQA MOSFET Datasheet: P-Ch, 20V, 1.6A. Full specification with pinout and replacement list

RQJ0204XGDQA Specs and Replacement

Type Designator: RQJ0204XGDQA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 37 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: SC59A MPAK

RQJ0204XGDQA substitution

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RQJ0204XGDQA datasheet

4.1. Size:86K renesas
r07ds0293ej rqj0204xgd.pdf pdf_icon

Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400 (Previous REJ03G1320-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 219 m typ (VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3... See More ⇒

8.1. Size:85K renesas
r07ds0290ej rqj0201ugd.pdf pdf_icon

Preliminary Datasheet RQJ0201UGDQA R07DS0290EJ0400 (Previous REJ03G1317-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 53 m typ (VGS = 4.5 V, ID = 1.8 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 ... See More ⇒

8.2. Size:85K renesas
r07ds0292ej rqj0203wgd.pdf pdf_icon

Preliminary Datasheet RQJ0203WGDQA R07DS0292EJ0400 (Previous REJ03G1319-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 142 m typ (VGS = 4.5 V, ID = 1.1 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3... See More ⇒

8.3. Size:85K renesas
r07ds0291ej rqj0202vgd.pdf pdf_icon

Preliminary Datasheet RQJ0202VGDQA R07DS0291EJ0400 (Previous REJ03G1318-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 83 m typ (VGS = 4.5 V, ID = 1.4 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D G ... See More ⇒

Detailed specifications: RJL6015DPK , RJL6018DPK , RJL6020DPK , RJL6032DPP-M0 , RJM0306JSP , RQJ0201UGDQA , RQJ0202VGDQA , RQJ0203WGDQA , 8205A , RQJ0301HGDQS , RQJ0302NGDQA , RQJ0303PGDQA , RQJ0304DQDQA , RQJ0304DQDQS , RQJ0305EQDQA , RQJ0305EQDQS , RQJ0306FQDQA .