RQJ0305EQDQA MOSFET. Datasheet pdf. Equivalent
Type Designator: RQJ0305EQDQA
Marking Code: EQ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
|Id|ⓘ - Maximum Drain Current: 2.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3 nC
trⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SC59A MPAK
RQJ0305EQDQA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RQJ0305EQDQA Datasheet (PDF)
rej03g1779 rqj0305eqdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0297ej rqj0305eqd.pdf
Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200(Previous: REJ03G1718-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32
r07ds0294ej rqj0302ngd.pdf
Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0500(Previous: REJ03G1271-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 138 m typ (VGS = 10 V, ID = 1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3
rej03g1780 rqj0306fqdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1265 rqj0301hgdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0296ej rqj0304dqd.pdf
Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0200(Previous: REJ03G1717-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32
rej03g1778 rqj0304dqdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0298ej rqj0306fqd.pdf
Preliminary Datasheet RQJ0306FQDQA R07DS0298EJ0200(Previous: REJ03G1719-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32
r07ds0295ej rqj0303pgd.pdf
Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500(Previous: REJ03G1272-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: BF1210
History: BF1210
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918