Справочник MOSFET. RQJ0305EQDQA

 

RQJ0305EQDQA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: RQJ0305EQDQA

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 0.8 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Максимально допустимый постоянный ток стока (Id): 2.4 A

Сопротивление сток-исток открытого транзистора (Rds): 0.11 Ohm

Тип корпуса: MPAK

Аналог (замена) для RQJ0305EQDQA

 

 

RQJ0305EQDQA Datasheet (PDF)

1.1. rej03g1779 rqj0305eqdqsds.pdf Size:126K _renesas

RQJ0305EQDQA
RQJ0305EQDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. r07ds0297ej rqj0305eqd.pdf Size:125K _renesas

RQJ0305EQDQA
RQJ0305EQDQA

Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200 (Previous: REJ03G1718-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source G

 4.1. rej03g1780 rqj0306fqdqsds.pdf Size:129K _renesas

RQJ0305EQDQA
RQJ0305EQDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g1778 rqj0304dqdqsds.pdf Size:128K _renesas

RQJ0305EQDQA
RQJ0305EQDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. rej03g1265 rqj0301hgdqsds.pdf Size:103K _renesas

RQJ0305EQDQA
RQJ0305EQDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. r07ds0298ej rqj0306fqd.pdf Size:110K _renesas

RQJ0305EQDQA
RQJ0305EQDQA

Preliminary Datasheet RQJ0306FQDQA R07DS0298EJ0200 (Previous: REJ03G1719-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source G

 4.5. r07ds0294ej rqj0302ngd.pdf Size:82K _renesas

RQJ0305EQDQA
RQJ0305EQDQA

Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0500 (Previous: REJ03G1271-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 138 m? typ (VGS = 10 V, ID = 1.1 A) ? Low drive current ? High speed switching ? 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2

4.6. r07ds0295ej rqj0303pgd.pdf Size:98K _renesas

RQJ0305EQDQA
RQJ0305EQDQA

Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500 (Previous: REJ03G1272-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 54 m? typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2.

4.7. r07ds0296ej rqj0304dqd.pdf Size:109K _renesas

RQJ0305EQDQA
RQJ0305EQDQA

Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0200 (Previous: REJ03G1717-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source G

Другие MOSFET... RQJ0202VGDQA , RQJ0203WGDQA , RQJ0204XGDQA , RQJ0301HGDQS , RQJ0302NGDQA , RQJ0303PGDQA , RQJ0304DQDQA , RQJ0304DQDQS , IRFP064N , RQJ0305EQDQS , RQJ0306FQDQA , RQJ0306FQDQS , RQJ0601DGDQS , RQJ0602EGDQA , RQJ0602EGDQS , RQJ0603LGDQA , RQK0201QGDQA .

 

 
Back to Top

 


RQJ0305EQDQA
  RQJ0305EQDQA
  RQJ0305EQDQA
 

social 

Список транзисторов

Обновления

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |
 

 

 

 

 
Back to Top