RQK0202RGDQA PDF and Equivalents Search

 

RQK0202RGDQA Specs and Replacement

Type Designator: RQK0202RGDQA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 74 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SC59A MPAK

RQK0202RGDQA substitution

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RQK0202RGDQA datasheet

 4.1. Size:85K  renesas
 r07ds0302ej rqk0202rgd.pdf pdf_icon

RQK0202RGDQA

Preliminary Datasheet RQK0202RGDQA R07DS0302EJ0400 (Previous REJ03G1322-0300) Silicon N Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 42 m typ (VGS = 4.5 V, ID = 1.9 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. ... See More ⇒

 8.1. Size:85K  renesas
 r07ds0304ej rqk0204tgd.pdf pdf_icon

RQK0202RGDQA

Preliminary Datasheet RQK0204TGDQA R07DS0304EJ0400 (Previous REJ03G1324-0300) Silicon N Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 100 m typ (VGS = 4.5 V, ID = 1.2 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1.... See More ⇒

 8.2. Size:84K  renesas
 r07ds0303ej rqk0203sgd.pdf pdf_icon

RQK0202RGDQA

Preliminary Datasheet RQK0203SGDQA R07DS0303EJ0400 (Previous REJ03G1323-0300) Silicon N Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D G 3 1. ... See More ⇒

 8.3. Size:85K  renesas
 r07ds0301ej rqk0201qgd.pdf pdf_icon

RQK0202RGDQA

Preliminary Datasheet RQK0201QGDQA R07DS0301EJ0400 (Previous REJ03G1321-0300) Silicon N Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 25 m typ (VGS = 4.5 V, ID = 2.4 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. ... See More ⇒

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Detailed specifications: RQJ0305EQDQS, RQJ0306FQDQA, RQJ0306FQDQS, RQJ0601DGDQS, RQJ0602EGDQA, RQJ0602EGDQS, RQJ0603LGDQA, RQK0201QGDQA, 4435, RQK0203SGDQA, RQK0204TGDQA, RQK0301FGDQS, RQK0302GGDQA, RQK0302GGDQS, RQK0303MGDQA, RQK0601AGDQS, RQK0603CGDQA

Keywords - RQK0202RGDQA MOSFET specs

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