All MOSFET. RQK0202RGDQA Datasheet

 

RQK0202RGDQA Datasheet and Replacement


   Type Designator: RQK0202RGDQA
   Marking Code: RG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3.7 nC
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SC59A MPAK
 

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RQK0202RGDQA Datasheet (PDF)

 4.1. Size:85K  renesas
 r07ds0302ej rqk0202rgd.pdf pdf_icon

RQK0202RGDQA

Preliminary Datasheet RQK0202RGDQA R07DS0302EJ0400(Previous: REJ03G1322-0300)Silicon N Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 42 m typ (VGS = 4.5 V, ID = 1.9 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1.

 8.1. Size:85K  renesas
 r07ds0304ej rqk0204tgd.pdf pdf_icon

RQK0202RGDQA

Preliminary Datasheet RQK0204TGDQA R07DS0304EJ0400(Previous: REJ03G1324-0300)Silicon N Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 100 m typ (VGS = 4.5 V, ID = 1.2 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1.

 8.2. Size:84K  renesas
 r07ds0303ej rqk0203sgd.pdf pdf_icon

RQK0202RGDQA

Preliminary Datasheet RQK0203SGDQA R07DS0303EJ0400(Previous: REJ03G1323-0300)Silicon N Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3DG3 1.

 8.3. Size:85K  renesas
 r07ds0301ej rqk0201qgd.pdf pdf_icon

RQK0202RGDQA

Preliminary Datasheet RQK0201QGDQA R07DS0301EJ0400(Previous: REJ03G1321-0300)Silicon N Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 25 m typ (VGS = 4.5 V, ID = 2.4 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1.

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Datasheet: RQJ0305EQDQS , RQJ0306FQDQA , RQJ0306FQDQS , RQJ0601DGDQS , RQJ0602EGDQA , RQJ0602EGDQS , RQJ0603LGDQA , RQK0201QGDQA , 2SK3568 , RQK0203SGDQA , RQK0204TGDQA , RQK0301FGDQS , RQK0302GGDQA , RQK0302GGDQS , RQK0303MGDQA , RQK0601AGDQS , RQK0603CGDQA .

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