RQK0302GGDQA Datasheet. Specs and Replacement

Type Designator: RQK0302GGDQA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: SC59A MPAK

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RQK0302GGDQA datasheet

 3.1. Size:104K  renesas
 rej03g1270 rqk0302ggdqsds.pdf pdf_icon

RQK0302GGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 4.1. Size:83K  renesas
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RQK0302GGDQA

Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0500 (Previous REJ03G1275-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D G 1. Sour... See More ⇒

 8.1. Size:104K  renesas
 rej03g1269 rqk0301fgdqsds.pdf pdf_icon

RQK0302GGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:83K  renesas
 r07ds0306ej rqk0303mgd.pdf pdf_icon

RQK0302GGDQA

Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 (Previous REJ03G1276-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. S... See More ⇒

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Detailed specifications: RQJ0602EGDQA, RQJ0602EGDQS, RQJ0603LGDQA, RQK0201QGDQA, RQK0202RGDQA, RQK0203SGDQA, RQK0204TGDQA, RQK0301FGDQS, SPP20N60C3, RQK0302GGDQS, RQK0303MGDQA, RQK0601AGDQS, RQK0603CGDQA, RQK0603CGDQS, RQK0604IGDQA, RQK0605JGDQA, RQK0606KGDQA

Keywords - RQK0302GGDQA MOSFET specs

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