All MOSFET. RQK2001HQDQA Datasheet

 

RQK2001HQDQA Datasheet and Replacement


   Type Designator: RQK2001HQDQA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 0.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.7 Ohm
   Package: SC59A MPAK
      - MOSFET Cross-Reference Search

 

RQK2001HQDQA Datasheet (PDF)

 4.1. Size:106K  renesas
 r07ds0311ej rqk2001hqd.pdf pdf_icon

RQK2001HQDQA

Preliminary Datasheet RQK2001HQDQA R07DS0311EJ0200(Previous: REJ03G1731-0100)Silicon N Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features High drain to source voltage and Low gate drive VDSS : 200 V and VGSS : 30 V Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Packag

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BSO083N03MSG | 15NM70L-TF3-T | AP3P7R0EMT | AONY36354 | GSM3430W | AOSS32136C | 2SK2018-01S

Keywords - RQK2001HQDQA MOSFET datasheet

 RQK2001HQDQA cross reference
 RQK2001HQDQA equivalent finder
 RQK2001HQDQA lookup
 RQK2001HQDQA substitution
 RQK2001HQDQA replacement

 

 
Back to Top

 


 
.