All MOSFET. RQK2001HQDQA Datasheet

 

RQK2001HQDQA MOSFET. Datasheet pdf. Equivalent


   Type Designator: RQK2001HQDQA
   Marking Code: HQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.8 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.7 Ohm
   Package: SC59A MPAK

 RQK2001HQDQA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RQK2001HQDQA Datasheet (PDF)

 4.1. Size:106K  renesas
 r07ds0311ej rqk2001hqd.pdf

RQK2001HQDQA RQK2001HQDQA

Preliminary Datasheet RQK2001HQDQA R07DS0311EJ0200(Previous: REJ03G1731-0100)Silicon N Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features High drain to source voltage and Low gate drive VDSS : 200 V and VGSS : 30 V Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Packag

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSH8N80 | SSI2N60B | SWN8N80K | RU4090L | NCEA01P13K | SSF6007 | P0260EIA

 

 
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