RQK2001HQDQA PDF and Equivalents Search

 

RQK2001HQDQA Specs and Replacement

Type Designator: RQK2001HQDQA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.7 Ohm

Package: SC59A MPAK

RQK2001HQDQA substitution

- MOSFET ⓘ Cross-Reference Search

 

RQK2001HQDQA datasheet

 4.1. Size:106K  renesas
 r07ds0311ej rqk2001hqd.pdf pdf_icon

RQK2001HQDQA

Preliminary Datasheet RQK2001HQDQA R07DS0311EJ0200 (Previous REJ03G1731-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features High drain to source voltage and Low gate drive VDSS 200 V and VGSS 30 V Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Packag... See More ⇒

Detailed specifications: RQK0603CGDQA, RQK0603CGDQS, RQK0604IGDQA, RQK0605JGDQA, RQK0606KGDQA, RQK0607AQDQS, RQK0608BQDQS, RQK0609CQDQS, IRFP450, RQK2501YGDQA, RQM2201DNS, RJK0362DSP, RJK0358DSP, HAT1132R, HAT1131R, HAT1130R, HAT1129R

Keywords - RQK2001HQDQA MOSFET specs

 RQK2001HQDQA cross reference

 RQK2001HQDQA equivalent finder

 RQK2001HQDQA pdf lookup

 RQK2001HQDQA substitution

 RQK2001HQDQA replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.