All MOSFET. RQK2001HQDQA Datasheet

 

RQK2001HQDQA Datasheet and Replacement


   Type Designator: RQK2001HQDQA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.7 Ohm
   Package: SC59A MPAK
 

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RQK2001HQDQA Datasheet (PDF)

 4.1. Size:106K  renesas
 r07ds0311ej rqk2001hqd.pdf pdf_icon

RQK2001HQDQA

Preliminary Datasheet RQK2001HQDQA R07DS0311EJ0200(Previous: REJ03G1731-0100)Silicon N Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features High drain to source voltage and Low gate drive VDSS : 200 V and VGSS : 30 V Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Packag

Datasheet: RQK0603CGDQA , RQK0603CGDQS , RQK0604IGDQA , RQK0605JGDQA , RQK0606KGDQA , RQK0607AQDQS , RQK0608BQDQS , RQK0609CQDQS , IRF1407 , RQK2501YGDQA , RQM2201DNS , RJK0362DSP , RJK0358DSP , HAT1132R , HAT1131R , HAT1130R , HAT1129R .

History: NCE70N380D | FTK12N65DD | CTD03N10P5 | SVG105R5NT | AP98T06GS-HF | IRL3714LPBF | SVGP082R6NL5A

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