RJK0362DSP PDF and Equivalents Search

 

RJK0362DSP Specs and Replacement

Type Designator: RJK0362DSP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.4 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: SOP8

RJK0362DSP substitution

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RJK0362DSP datasheet

 0.1. Size:125K  renesas
rej03g1653 rjk0362dspds.pdf pdf_icon

RJK0362DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:125K  renesas
rej03g1937 rjk0364dpa02ds.pdf pdf_icon

RJK0362DSP

Preliminary Datasheet RJK0364DPA-02 REJ03G1937-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008... See More ⇒

 8.2. Size:86K  renesas
rjk0369dsp.pdf pdf_icon

RJK0362DSP

RJK0369DSP Silicon N Channel Power MOS FET Power Switching REJ03G1662-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 5 6 7 8 D D D D 5 6 7 8 1,... See More ⇒

 8.3. Size:125K  renesas
rej03g1938 rjk0365dpa02ds.pdf pdf_icon

RJK0362DSP

Preliminary Datasheet RJK0365DPA-02 REJ03G1938-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008... See More ⇒

Detailed specifications: RQK0605JGDQA, RQK0606KGDQA, RQK0607AQDQS, RQK0608BQDQS, RQK0609CQDQS, RQK2001HQDQA, RQK2501YGDQA, RQM2201DNS, BS170, RJK0358DSP, HAT1132R, HAT1131R, HAT1130R, HAT1129R, HAT1128R, HAT1139H, HAT1127H

Keywords - RJK0362DSP MOSFET specs

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