RJK0362DSP - описание и поиск аналогов

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK0364DPA-02 REJ03G1937-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008

RJK0369DSP Silicon N Channel Power MOS FET Power Switching REJ03G1662-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 5 6 7 8 D D D D 5 6 7 8 1,

Preliminary Datasheet RJK0365DPA-02 REJ03G1938-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008

Preliminary Datasheet RJK0366DPA-02 REJ03G1939-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008

Preliminary Datasheet RJK0368DPA REJ03G1658-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name WP

RJK0365DPA www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 60 30 31 nC 0.009 at VGS = 4.5 V 48 APPLICATIONS OR-ing DFN5X6 Single D D Server D 8 DC/DC D 7 D 6 5 G 1 2 S S 3 S