All MOSFET. 2SJ76 Datasheet

 

2SJ76 Datasheet and Replacement


   Type Designator: 2SJ76
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 140 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.2 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: TO220AB
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2SJ76 Datasheet (PDF)

 ..1. Size:78K  renesas
 rej03g0122 2sj76 2sj77 2sj78 2sj79.pdf pdf_icon

2SJ76

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..2. Size:33K  hitachi
 2sj76 2sj77 2sj78 2sj79.pdf pdf_icon

2SJ76

2SJ76, 2SJ77, 2SJ78, 2SJ79Silicon P-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed power switchingComplementary pair with 2SK213, 2SK214, 2SK215, 2SK216Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Fl

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SUN830DN | FQI17N08LTU | PMFPB8040XP | FTK50P03PDFN56 | SSF8NP60U | BBL4001

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