All MOSFET. 2SJ665 Datasheet

 

2SJ665 Datasheet and Replacement


   Type Designator: 2SJ665
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
   Package: SMP
 

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2SJ665 Datasheet (PDF)

 ..1. Size:38K  sanyo
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2SJ665

Ordering number : EN8590 2SJ665P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ665ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --

 9.1. Size:209K  toshiba
 2sj669.pdf pdf_icon

2SJ665

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8

 9.2. Size:204K  toshiba
 2sj668.pdf pdf_icon

2SJ665

2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 t

 9.3. Size:38K  sanyo
 2sj661.pdf pdf_icon

2SJ665

Ordering number : EN8586 2SJ661P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ661ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --

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Datasheet: RQA0008RXDQS , RQA0009TXDQS , RQA0004LXAQS , RQA0005AQS , RQA0008NXAQS , RQA0009SXAQS , RQA0010UXAQS , 2SJ661 , IRFP064N , 2SK3707 , 2SK3821 , 2SK3823 , 2SK3824 , 2SK3826 , 2SK3827 , 2SK3829 , 2SK3830 .

History: ALD1101SAL | AP6680BGM-HF | VS40200AT | APT47N65BC3G | 2SK1040 | SSF60R360S2E | 2SK3294

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