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Ordering number EN8590 2SJ665 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ665 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --

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2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.12 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0.8

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2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON-resistance RDS (ON) = 0.12 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0.8 t

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Ordering number EN8586 2SJ661 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ661 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --