Справочник MOSFET. 2SJ665

 

2SJ665 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 2SJ665
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 27 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 150 ns
   Cossⓘ - Выходная емкость: 280 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.077 Ohm
   Тип корпуса: SMP
     - подбор MOSFET транзистора по параметрам

 

2SJ665 Datasheet (PDF)

 ..1. Size:38K  sanyo
 2sj665.pdf pdf_icon

2SJ665

Ordering number : EN8590 2SJ665P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ665ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --

 9.1. Size:209K  toshiba
 2sj669.pdf pdf_icon

2SJ665

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8

 9.2. Size:204K  toshiba
 2sj668.pdf pdf_icon

2SJ665

2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 t

 9.3. Size:38K  sanyo
 2sj661.pdf pdf_icon

2SJ665

Ordering number : EN8586 2SJ661P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ661ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: WFF8N60 | RTR030N05 | IXFH60N20F | RRR040P03FRA | 2N6966JANTXV | HGB039N08A | IXFP18N65X2

 

 
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