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5LP01S Specs and Replacement

Type Designator: 5LP01S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.07 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 4.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 23 Ohm

Package: SMCP

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5LP01S datasheet

 ..1. Size:37K  sanyo
5lp01s.pdf pdf_icon

5LP01S

Ordering number EN6666A 5LP01S SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 5LP01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 V Gate-to-Source Voltage VGSS ... See More ⇒

 0.1. Size:28K  sanyo
5lp01sp.pdf pdf_icon

5LP01S

Ordering number ENN6621 5LP01SP P-Channel Silicon MOSFET 5LP01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2180 2.5V drive. [5LP01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Source 2 Drain 3 Gate 3.0 Specifications 3.8nom SANYO SPA Absolute Maximum Ratings at Ta=25 C ... See More ⇒

 0.2. Size:36K  sanyo
5lp01ss.pdf pdf_icon

5LP01S

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 9.1. Size:27K  sanyo
5lp01n.pdf pdf_icon

5LP01S

Ordering number ENN6620 5LP01N P-Channel Silicon MOSFET 5LP01N Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2178 2.5V drive. [5LP01N] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Source 2 Drain 3 Gate Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta=25 C Paramete... See More ⇒

Detailed specifications: 2SK4197FS, 2SK4198FG, 2SK4198FS, 2SK4199LS, 3LN01SS, 3LP01SS, 5LN01S, 5LP01C, IRF9540, 5LP01SP, 5LP01SS, BBL4001, BMS3003, BMS3004, BMS4003, BXL4001, CPH3350

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