Справочник MOSFET. 5LP01S

 

5LP01S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 5LP01S
   Маркировка: XB
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.07 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 1.4 nC
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 4.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 23 Ohm
   Тип корпуса: SMCP

 Аналог (замена) для 5LP01S

 

 

5LP01S Datasheet (PDF)

 ..1. Size:37K  sanyo
5lp01s.pdf

5LP01S
5LP01S

Ordering number : EN6666A5LP01SSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device5LP01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS

 0.1. Size:28K  sanyo
5lp01sp.pdf

5LP01S
5LP01S

Ordering number : ENN66215LP01SPP-Channel Silicon MOSFET5LP01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[5LP01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : Gate3.0Specifications3.8nomSANYO : SPAAbsolute Maximum Ratings at Ta=25C

 0.2. Size:36K  sanyo
5lp01ss.pdf

5LP01S
5LP01S

Ordering number : EN6622A5LP01SSSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFET5LP01SS General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS

 9.1. Size:27K  sanyo
5lp01n.pdf

5LP01S
5LP01S

Ordering number : ENN66205LP01NP-Channel Silicon MOSFET5LP01NUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive.[5LP01N]5.04.04.00.450.50.440.451 2 31 : Source2 : Drain3 : GateSpecifications1.3 1.3SANYO : NPAbsolute Maximum Ratings at Ta=25CParamete

 9.2. Size:36K  sanyo
5lp01c.pdf

5LP01S
5LP01S

Ordering number : EN6619A5LP01CSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device5LP01CApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS 10 V

 9.3. Size:250K  sanyo
5lp01m.pdf

5LP01S
5LP01S

Ordering number : EN6135A5LP01MSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFET5LP01MGeneral-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS

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