5LP01SP Specs and Replacement
Type Designator: 5LP01SP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.07 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 4.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 23 Ohm
Package: SPA
5LP01SP substitution
- MOSFET ⓘ Cross-Reference Search
5LP01SP datasheet
5lp01sp.pdf
Ordering number ENN6621 5LP01SP P-Channel Silicon MOSFET 5LP01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2180 2.5V drive. [5LP01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Source 2 Drain 3 Gate 3.0 Specifications 3.8nom SANYO SPA Absolute Maximum Ratings at Ta=25 C ... See More ⇒
5lp01s.pdf
Ordering number EN6666A 5LP01S SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 5LP01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 V Gate-to-Source Voltage VGSS ... See More ⇒
5lp01n.pdf
Ordering number ENN6620 5LP01N P-Channel Silicon MOSFET 5LP01N Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2178 2.5V drive. [5LP01N] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Source 2 Drain 3 Gate Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta=25 C Paramete... See More ⇒
Detailed specifications: 2SK4198FG, 2SK4198FS, 2SK4199LS, 3LN01SS, 3LP01SS, 5LN01S, 5LP01C, 5LP01S, AON7408, 5LP01SS, BBL4001, BMS3003, BMS3004, BMS4003, BXL4001, CPH3350, CPH3356
Keywords - 5LP01SP MOSFET specs
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