5LP01SP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 5LP01SP
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.07 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 4.2 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 23 Ohm
Тип корпуса: SPA
5LP01SP Datasheet (PDF)
5lp01sp.pdf
Ordering number : ENN66215LP01SPP-Channel Silicon MOSFET5LP01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[5LP01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : Gate3.0Specifications3.8nomSANYO : SPAAbsolute Maximum Ratings at Ta=25C
5lp01s.pdf
Ordering number : EN6666A5LP01SSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device5LP01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS
5lp01ss.pdf
Ordering number : EN6622A5LP01SSSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFET5LP01SS General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS
5lp01n.pdf
Ordering number : ENN66205LP01NP-Channel Silicon MOSFET5LP01NUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive.[5LP01N]5.04.04.00.450.50.440.451 2 31 : Source2 : Drain3 : GateSpecifications1.3 1.3SANYO : NPAbsolute Maximum Ratings at Ta=25CParamete
5lp01c.pdf
Ordering number : EN6619A5LP01CSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device5LP01CApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS 10 V
5lp01m.pdf
Ordering number : EN6135A5LP01MSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFET5LP01MGeneral-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918