All MOSFET. BBL4001 Datasheet

 

BBL4001 Datasheet and Replacement


   Type Designator: BBL4001
   Marking Code: BL4001
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 74 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 135 nC
   trⓘ - Rise Time: 300 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: TO220ML
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BBL4001 Datasheet (PDF)

 ..1. Size:268K  1
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BBL4001

BBL4001Ordering number : ENA1356SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBBL4001ApplicationsFeatures Low ON-resistance. Motor drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage V

 ..2. Size:231K  onsemi
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BBL4001

Ordering number : ENA1356ABBL4001N-Channel Power MOSFEThttp://onsemi.com60V, 74A, 6.1m , TO-220F-3SGFeatures ON-resistance RDS(on)1=4.7m (typ.) Input capacitance Ciss=6,900pF(typ.) 4V driveSpecificationsTO-220F-3SGAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 60 VGate to Source Voltage VGSS

 ..3. Size:249K  inchange semiconductor
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BBL4001

isc N-Channel MOSFET Transistor BBL4001FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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