BMS3004 Datasheet and Replacement
Type Designator: BMS3004
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 245 nS
Cossⓘ - Output Capacitance: 1000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220ML
BMS3004 substitution
BMS3004 Datasheet (PDF)
bms3004.pdf

BMS3004Ordering number : ENA1908SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBMS3004ApplicationsFeatures ON-resistance RDS(on)1=6.5m (typ.) Input capacitance Ciss=13400pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --75
bms3004.pdf

Ordering number : ENA1908BBMS3004P-Channel Power MOSFEThttp://onsemi.com 75V, 68A, 8.5m , TO-220F-3SGFeatures ON-resistance RDS(on)1=6.5m (typ.) Input capacitance Ciss=13400pF (typ.) 4V driveTO-220F-3SGSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS --75 VGate to Source V
bms3003.pdf

BMS3003Ordering number : ENA1907SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBMS3003ApplicationsFeatures ON-resistance RDS(on)1=5.0m (typ.) Input capacitance Ciss=13200pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60
Datasheet: 3LP01SS , 5LN01S , 5LP01C , 5LP01S , 5LP01SP , 5LP01SS , BBL4001 , BMS3003 , IRF1010E , BMS4003 , BXL4001 , CPH3350 , CPH3356 , CPH3360 , CPH5617 , CPH6354 , CPH6355 .
History: FDPF041N06BL1 | 2SJ183
Keywords - BMS3004 MOSFET datasheet
BMS3004 cross reference
BMS3004 equivalent finder
BMS3004 lookup
BMS3004 substitution
BMS3004 replacement
History: FDPF041N06BL1 | 2SJ183



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