All MOSFET. BMS4003 Datasheet

 

BMS4003 Datasheet and Replacement


   Type Designator: BMS4003
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO220ML
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BMS4003 Datasheet (PDF)

 ..1. Size:300K  sanyo
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BMS4003

BMS4003Ordering number : ENA1923SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBMS4003ApplicationsFeatures ON-resistance RDS(on)=50m (typ.) Input capacitance Ciss=680pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VG

 8.1. Size:315K  sanyo
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BMS4003

BMS4007Ordering number : ENA1820SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBMS4007ApplicationsFeatures ON-resistance RDS(on)=6m (typ.) Input capacitance Ciss=9700pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75 VGa

 8.2. Size:249K  inchange semiconductor
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BMS4003

isc N-Channel MOSFET Transistor BMS4007FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SFF150C | AON6794 | CED05N8 | IRLR024 | BRCS10N15DP | MC08N005C | BL10N70-A

Keywords - BMS4003 MOSFET datasheet

 BMS4003 cross reference
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