BMS4003 Datasheet and Replacement
Type Designator: BMS4003
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO220ML
BMS4003 substitution
BMS4003 Datasheet (PDF)
bms4003.pdf

BMS4003Ordering number : ENA1923SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBMS4003ApplicationsFeatures ON-resistance RDS(on)=50m (typ.) Input capacitance Ciss=680pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VG
bms4007.pdf

BMS4007Ordering number : ENA1820SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBMS4007ApplicationsFeatures ON-resistance RDS(on)=6m (typ.) Input capacitance Ciss=9700pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75 VGa
bms4007.pdf

isc N-Channel MOSFET Transistor BMS4007FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Datasheet: 5LN01S , 5LP01C , 5LP01S , 5LP01SP , 5LP01SS , BBL4001 , BMS3003 , BMS3004 , IRF4905 , BXL4001 , CPH3350 , CPH3356 , CPH3360 , CPH5617 , CPH6354 , CPH6355 , ECH8420 .
History: VBE1695 | CMP3006-VB | HFD630 | SE30P09D | TSD5N65M | 8N65KL-TA3-T | 2SK3694-01SJ
Keywords - BMS4003 MOSFET datasheet
BMS4003 cross reference
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History: VBE1695 | CMP3006-VB | HFD630 | SE30P09D | TSD5N65M | 8N65KL-TA3-T | 2SK3694-01SJ



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