All MOSFET. FW216A Datasheet

 

FW216A Datasheet and Replacement


   Type Designator: FW216A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: SOIC-8
 

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FW216A Datasheet (PDF)

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FW216A

Ordering number : ENA0176CFW216AN-Channel Power MOSFEThttp://onsemi.com35V, 4.5A, 64m , Dual SOIC8Features ON-resistance Nch : RDS(on)1=49m (typ.) 4.0V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 35 VGate to Source Voltage

Datasheet: ECH8674 , ECH8675 , EFC4612R , EFC4615R , EFC4618R-P , EMH2411R , FSS294 , FTS2057 , 20N50 , MCH3375 , MCH3376 , MCH3474 , MCH3476 , MCH3478 , MCH3479 , MCH6448 , MCH6603 .

History: IPB120N04S4-01 | STS65R190SS2 | STS65R190FS2 | IXZR08N120A | SED30P30M | IXTH12N45A | PMZ290UNE2

Keywords - FW216A MOSFET datasheet

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