FW216A Specs and Replacement
Type Designator: FW216A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: SOIC-8
FW216A substitution
- MOSFET ⓘ Cross-Reference Search
FW216A datasheet
fw216a.pdf
Ordering number ENA0176C FW216A N-Channel Power MOSFET http //onsemi.com 35V, 4.5A, 64m , Dual SOIC8 Features ON-resistance Nch RDS(on)1=49m (typ.) 4.0V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 35 V Gate to Source Voltage ... See More ⇒
Detailed specifications: ECH8674, ECH8675, EFC4612R, EFC4615R, EFC4618R-P, EMH2411R, FSS294, FTS2057, STP80NF70, MCH3375, MCH3376, MCH3474, MCH3476, MCH3478, MCH3479, MCH6448, MCH6603
Keywords - FW216A MOSFET specs
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History: 2SK2549 | WML15N65F2 | FDD6644 | FDB3632
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