FW216A Datasheet and Replacement
Type Designator: FW216A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: SOIC-8
FW216A substitution
FW216A Datasheet (PDF)
fw216a.pdf

Ordering number : ENA0176CFW216AN-Channel Power MOSFEThttp://onsemi.com35V, 4.5A, 64m , Dual SOIC8Features ON-resistance Nch : RDS(on)1=49m (typ.) 4.0V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 35 VGate to Source Voltage
Datasheet: ECH8674 , ECH8675 , EFC4612R , EFC4615R , EFC4618R-P , EMH2411R , FSS294 , FTS2057 , 18N50 , MCH3375 , MCH3376 , MCH3474 , MCH3476 , MCH3478 , MCH3479 , MCH6448 , MCH6603 .
History: TPB120R800A | MEE7816S | HM25N08D | IRFR3410TR | SLD2N65UZ | LBSS84ELT1G | TK32A12N1
Keywords - FW216A MOSFET datasheet
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History: TPB120R800A | MEE7816S | HM25N08D | IRFR3410TR | SLD2N65UZ | LBSS84ELT1G | TK32A12N1



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