FW216A MOSFET. Datasheet pdf. Equivalent
Type Designator: FW216A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.6 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: SOIC-8
FW216A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FW216A Datasheet (PDF)
fw216a.pdf
Ordering number : ENA0176CFW216AN-Channel Power MOSFEThttp://onsemi.com35V, 4.5A, 64m , Dual SOIC8Features ON-resistance Nch : RDS(on)1=49m (typ.) 4.0V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 35 VGate to Source Voltage
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SSM3K04FS
History: SSM3K04FS
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