MCH5908 MOSFET. Datasheet pdf. Equivalent
Type Designator: MCH5908
Marking Code: KG_KH
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.3 V
|Id|ⓘ - Maximum Drain Current: 0.05 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 42 Ohm
Package: MCPH5
MCH5908 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MCH5908 Datasheet (PDF)
mch5908.pdf
Ordering number : ENA1218 MCH5908SANYO SemiconductorsDATA SHEETN-Channel Silicon Junction FETHigh-Frequency Amplifier, AM Amplifier,MCH5908Low-Frequency Amplifier ApplicationsFeatures Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mountingefficiency greatly. The MCH5908 is formed with two chips, being equivalent to the 2SK3557,
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IRFI740G
History: IRFI740G
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918