TF408 Specs and Replacement
Type Designator: TF408
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.03 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.01 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 330 Ohm
Package: USFP
TF408 substitution
- MOSFET ⓘ Cross-Reference Search
TF408 datasheet
tf408.pdf
TF408 Ordering number ENA2008 SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET Low-Frequency General-Purpose Amplifier, TF408 Impedance Converter Applications Applications Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features Ultrasmall package facilitates miniaturization in end products 1.0mm 0.6mm 0.27mm (m... See More ⇒
Detailed specifications: SCH1343, SFT1345, VEC2415, 2SK715, CPH3910, CPH6904, MCH3914, MCH5908, STF13NM60N, TF410, 2SK2701A, 2SK2943, 2SK3003, 2SK3004, 2SK3199, 2SK3710, 2SK3711
Keywords - TF408 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WMN80R160S
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