TF410 Specs and Replacement
Type Designator: TF410
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.03 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 0.001 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 20000 Ohm
Package: USFP
TF410 substitution
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TF410 datasheet
tf410.pdf
TF410 Ordering number ENA2007 SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET Impedance Converter, TF410 Infrared Sensor Applications Applications Impedance conversion, infrared sensor applications Features Ultrasmall package facilities miniaturization in end products 1.0mm 0.6mm 0.27mm (max 0.3mm) Small IGSS max --500pA (VGSS= --20V, VDS=0V) ... See More ⇒
Detailed specifications: SFT1345, VEC2415, 2SK715, CPH3910, CPH6904, MCH3914, MCH5908, TF408, IRFZ24N, 2SK2701A, 2SK2943, 2SK3003, 2SK3004, 2SK3199, 2SK3710, 2SK3711, 2SK3800
Keywords - TF410 MOSFET specs
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