FKP202 Datasheet and Replacement
Type Designator: FKP202
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: TO220F
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FKP202 Datasheet (PDF)
fkp202.pdf

N-Channel MOS FET FKP202 March. 2007Features Package---FM20 (TO220 Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guarantee Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol Rating UnitDrain to Source Voltage VDSS
fkp202.pdf

isc N-Channel MOSFET Transistor FKP202FEATURESDrain Current I =45A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 53m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MTC2804Q8 | WMK25N80M3
Keywords - FKP202 MOSFET datasheet
FKP202 cross reference
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History: MTC2804Q8 | WMK25N80M3



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