R4008AND Specs and Replacement

Type Designator: R4008AND

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: CPT3 SC63 SOT428

R4008AND substitution

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R4008AND datasheet

 ..1. Size:1985K  rohm
 r4008and.pdf pdf_icon

R4008AND

Data Sheet 10V Drive Nch MOSFET R4008AND Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide SOA. (1) Gate 0.65 0.9 2.3 (2) Drain (1) (2) (3) 2.3 0.5 4) Drive circuits can be simple. (3) Source 1.0 5) Parallel use is easy. Application Swit... See More ⇒

Detailed specifications: MLD685D, SKP202, SKP253, 2SK3018, 2SK3018UB, 2SK3019, 2SK3019EB, 2SK3541, IRF540, R5005CNJ, R5007ANJ, R5007ANX, R5009ANJ, R5009ANX, R5009FNX, R5011ANJ, R5011ANX

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