R5007ANX Datasheet and Replacement
Type Designator: R5007ANX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220FM
R5007ANX substitution
R5007ANX Datasheet (PDF)
r5007anx.pdf

10V Drive Nch MOSFET R5007ANX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM10.0 3.2 4.52.8Features 1) Low on-resistance. 2) Fast switching speed. 1.23) Wide SOA (safe operating area). 1.34) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 0.86) Parallel use is easy. (1)Base2.54 2.54 0.75 2.6
r5007anj.pdf

10V Drive Nch MOSFET R5007ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.1 4.51.3 Features 1) Low on-resistance. 1.242) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.40.784) Gate-source voltage (VGSS) guaranteed to be 30V. 2.75.08(1) Base (Gate) (1) (2) (3)5) Drive circuits can be simple. (2) Collector (Drain)6)
r5007fnx.pdf

R5007FNXDatasheetNch 500V 7A Power MOSFETlOutlinel TO-220FMVDSS500VRDS(on)(Max.)1.3 ID7A PD40W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed t
Datasheet: 2SK3018 , 2SK3018UB , 2SK3019 , 2SK3019EB , 2SK3541 , R4008AND , R5005CNJ , R5007ANJ , IRFZ44 , R5009ANJ , R5009ANX , R5009FNX , R5011ANJ , R5011ANX , R5011FNX , R5013ANJ , R5013ANX .
History: CJ4153
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History: CJ4153



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