R5007ANX Specs and Replacement

Type Designator: R5007ANX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220FM

R5007ANX substitution

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R5007ANX datasheet

 ..1. Size:280K  rohm
 r5007anx.pdf pdf_icon

R5007ANX

10V Drive Nch MOSFET R5007ANX Structure Dimensions (Unit mm) Silicon N-channel MOSFET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 2) Fast switching speed. 1.2 3) Wide SOA (safe operating area). 1.3 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 0.8 6) Parallel use is easy. (1)Base 2.54 2.54 0.75 2.6 ... See More ⇒

 7.1. Size:267K  rohm
 r5007anj.pdf pdf_icon

R5007ANX

10V Drive Nch MOSFET R5007ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 1.24 2) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.4 0.78 4) Gate-source voltage (VGSS) guaranteed to be 30V. 2.7 5.08 (1) Base (Gate) (1) (2) (3) 5) Drive circuits can be simple. (2) Collector (Drain) 6)... See More ⇒

 9.1. Size:3129K  rohm
 r5007fnx.pdf pdf_icon

R5007ANX

R5007FNX Datasheet Nch 500V 7A Power MOSFET lOutline l TO-220FM VDSS 500V RDS(on)(Max.) 1.3 ID 7A PD 40W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed t... See More ⇒

Detailed specifications: 2SK3018, 2SK3018UB, 2SK3019, 2SK3019EB, 2SK3541, R4008AND, R5005CNJ, R5007ANJ, IRFZ44, R5009ANJ, R5009ANX, R5009FNX, R5011ANJ, R5011ANX, R5011FNX, R5013ANJ, R5013ANX

Keywords - R5007ANX MOSFET specs

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