R5007ANX - параметры транзистора MOSFET, его аналоги, datasheet

R5007ANX Datasheet (PDF)

..1. Size:280K rohm
r5007anx.pdf pdf_icon

10V Drive Nch MOSFET R5007ANX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM10.0 3.2 4.52.8Features 1) Low on-resistance. 2) Fast switching speed. 1.23) Wide SOA (safe operating area). 1.34) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 0.86) Parallel use is easy. (1)Base2.54 2.54 0.75 2.6

7.1. Size:267K rohm
r5007anj.pdf pdf_icon

10V Drive Nch MOSFET R5007ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.1 4.51.3 Features 1) Low on-resistance. 1.242) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.40.784) Gate-source voltage (VGSS) guaranteed to be 30V. 2.75.08(1) Base (Gate) (1) (2) (3)5) Drive circuits can be simple. (2) Collector (Drain)6)

9.1. Size:3129K rohm
r5007fnx.pdf pdf_icon

R5007FNXDatasheetNch 500V 7A Power MOSFETlOutlinel TO-220FMVDSS500VRDS(on)(Max.)1.3 ID7A PD40W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed t

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