All MOSFET. R5011FNX Datasheet

 

R5011FNX MOSFET. Datasheet pdf. Equivalent


   Type Designator: R5011FNX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220FM

 R5011FNX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R5011FNX Datasheet (PDF)

 ..1. Size:283K  rohm
 r5011fnx.pdf

R5011FNX R5011FNX

10V Drive Nch MOSFET R5011FNX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM10.0 3.2 4.52.8 Features 1) Fast reverse recovery time. 2) Low on-resistance. 1.21.33) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 0.85) Drive circuits can be simple. (1) Gate2.54 2.54 0.75 2.6(2) Drain (1) (2) (3)6) Parallel u

 7.1. Size:3269K  rohm
 r5011fnj.pdf

R5011FNX R5011FNX

R5011FNJDatasheetNch 500V 11A Power MOSFETlOutlinel LPT(S)VDSS 500VRDS(on)(Max.) 0.52 ID 11A PD 50W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed to

 9.1. Size:263K  rohm
 r5011anj.pdf

R5011FNX R5011FNX

10V Drive Nch MOSFET R5011ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.14.51.3 Features 1.241) Low on-resistance. 2) Fast switching speed. 2.54 0.40.782.73) Gate-source voltage (VGSS) guaranteed to be 30V. 5.08(1) Gate (1) (2) (3)4) Drive circuits can be simple. (2) Drain(3) SourceEach lead has same dimensions5) Parallel use is

 9.2. Size:232K  rohm
 r5011anx.pdf

R5011FNX R5011FNX

R5011ANX Transistors 10V Drive Nch MOSFET R5011ANX Dimensions (Unit : mm) Structure Silicon N-channel MOSFETTO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.22) Fast switching speed. 1.33) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8(1)Base4) Drive circuits can be simple. 2.54 2.54 0.75 2.6(2)Collector (1) (2) (3)5) Parallel use i

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SI6459BDQ | IXFH20N80Q | RU55200Q

 

 
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