R6008FNX MOSFET. Datasheet pdf. Equivalent
Type Designator: R6008FNX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: TO220FM
R6008FNX Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6008FNX Datasheet (PDF)
r6008fnx.pdf
10V Drive Nch MOSFET R6008FNX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM10.0 3.2 4.52.8 Features 1) Fast reverse recovery time. 1.22) Low on-resistance. 1.33) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8(1) Gate5) Drive circuits can be simple. 2.54 2.54 0.75 2.6(2) Drain (1) (2) (3)6) Parallel use is ea
r6008fnj.pdf
Data Sheet10V Drive Nch MOSFET R6008FNJ Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1) Fast reverse recovery time (trr)1.242) Low on-resistance.2.54 0.40.783) Fast switching speed.2.75.08(1) (2) (3)4) Gate-source voltage VGSS garanteed to be 30V .5) Drive circuits can be simple.6) Parallel use is easy.
r6008anx.pdf
R6008ANXNch 600V 8A Power MOSFET DatasheetOutlineVDSS600V TO-220FMRDS(on) (Max.)0.8ID8APD50W (1)(2)(3) Features Inner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead pla
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCEP040N10GU
History: NCEP040N10GU
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