R6010ANX Datasheet and Replacement
Type Designator: R6010ANX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 720 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
Package: TO220FM
- MOSFET Cross-Reference Search
R6010ANX Datasheet (PDF)
r6010anx.pdf

Data Sheet10V Drive Nch MOSFET R6010ANX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Fast switching speed.0.83) Gate-source voltage (VGSS) guaranteed to be 30V.(1) Gate2.54 2.54 0.75 2.64) Drive circuits can be simple. (2) Drain(1) (2) (3) (3) Source5) Parallel use is ea
r6010mnx.pdf

R6010MNXDatasheetNch 600V 10A Power MOSFETlOutlinelVDSS600VRDS(on)(Max.) 0.380 TO-220FMID 10APD56W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe 30V.5) Drive circuits can be simple.6) Pb-free p
r6010mnx.pdf

isc N-Channel MOSFET Transistor R6010MNXFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 380m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRLL014PBF | SVS70R360DE3TR | STD4NK60ZT4 | HX50N06-TA3 | AP30N30W | 2SK2845 | HMS15N60A
Keywords - R6010ANX MOSFET datasheet
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History: IRLL014PBF | SVS70R360DE3TR | STD4NK60ZT4 | HX50N06-TA3 | AP30N30W | 2SK2845 | HMS15N60A



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