R6010ANX Specs and Replacement

Type Designator: R6010ANX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm

Package: TO220FM

R6010ANX substitution

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R6010ANX datasheet

 ..1. Size:1194K  rohm
 r6010anx.pdf pdf_icon

R6010ANX

Data Sheet 10V Drive Nch MOSFET R6010ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Fast switching speed. 0.8 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate 2.54 2.54 0.75 2.6 4) Drive circuits can be simple. (2) Drain (1) (2) (3) (3) Source 5) Parallel use is ea... See More ⇒

 9.1. Size:2360K  rohm
 r6010mnx.pdf pdf_icon

R6010ANX

R6010MNX Datasheet Nch 600V 10A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.380 TO-220FM ID 10A PD 56W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Pb-free p... See More ⇒

 9.2. Size:251K  inchange semiconductor
 r6010mnx.pdf pdf_icon

R6010ANX

isc N-Channel MOSFET Transistor R6010MNX FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 380m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

Detailed specifications: R5205CND, R5207AND, R6004CND, R6006AND, R6006ANX, R6008ANX, R6008FNJ, R6008FNX, 2N7002, R6012ANJ, R6012ANX, R6012FNX, R6015ANJ, R6015ANX, R6015ANZ, R6015FNX, R6018ANJ

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