All MOSFET. R6010ANX Datasheet

 

R6010ANX MOSFET. Datasheet pdf. Equivalent

Type Designator: R6010ANX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 720 pF

Maximum Drain-Source On-State Resistance (Rds): 0.43 Ohm

Package: TO220FM

R6010ANX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

R6010ANX Datasheet (PDF)

1.1. r6010anx.pdf Size:1194K _rohm

R6010ANX
R6010ANX

Data Sheet 10V Drive Nch MOSFET R6010ANX ? Structure ? Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 10.0 ?3.2 4.5 2.8 ?Features 1.2 1) Low on-resistance. 1.3 2) Fast switching speed. 0.8 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate 2.54 2.54 0.75 2.6 4) Drive circuits can be simple. (2) Drain (1) (2) (3) (3) Source 5) Parallel use is easy. ? Appl

Datasheet: R5205CND , R5207AND , R6004CND , R6006AND , R6006ANX , R6008ANX , R6008FNJ , R6008FNX , IRFZ44V , R6012ANJ , R6012ANX , R6012FNX , R6015ANJ , R6015ANX , R6015ANZ , R6015FNX , R6018ANJ .

 


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