R6046ANZ Specs and Replacement

Type Designator: R6046ANZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 3900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO3PF

R6046ANZ substitution

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R6046ANZ datasheet

 ..1. Size:1155K  rohm
 r6046anz.pdf pdf_icon

R6046ANZ

Data Sheet 10V Drive Nch MOSFET R6046ANZ Structure Dimensions (Unit mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) Gate (1) (2) (3) 0.9 (2) Drain Application 5.45 5.45 (3) Source Switching Packaging specifications Inner circuit Package Bulk Type ... See More ⇒

 0.1. Size:748K  rohm
 r6046anz1.pdf pdf_icon

R6046ANZ

R6046ANZ1 Nch 600V 46A Power MOSFET Datasheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.09W ID 46A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead ... See More ⇒

 9.1. Size:1170K  rohm
 r6046fnz.pdf pdf_icon

R6046ANZ

Data Sheet 10V Drive Nch MOSFET R6046FNZ Structure Dimensions (Unit mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) Gate (1) (2) (3) 0.9 (2) Drain Application 5.45 5.45 (3) Source Switching Packaging specifications Inner circuit Package Bulk Type ... See More ⇒

 9.2. Size:754K  rohm
 r6046fnz1.pdf pdf_icon

R6046ANZ

R6046FNZ1 Nch 600V 46A Power MOSFET Datasheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.098W ID 46A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead ... See More ⇒

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Detailed specifications: R6015FNX, R6018ANJ, R6018ANX, R6020ANJ, R6020ANX, R6020ANZ, R6020FNX, R6025ANZ, IRF1010E, R6046FNZ, R8002ANX, R8008ANX, RAF040P01, RAL025P01, RAL035P01, RAL045P01, RAQ045P01

Keywords - R6046ANZ MOSFET specs

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