R6046ANZ - Даташиты. Аналоги. Основные параметры

Data Sheet10V Drive Nch MOSFET R6046ANZ Structure Dimensions (Unit : mm)Silicon N-channel MOSFET 5.5TO-3PF3.015.53.6Features1) Low on-resistance.2) Low input capacitance.2.02.03.03) High ESD.0.75(1) Gate(1) (2) (3)0.9(2) Drain Application 5.45 5.45(3) SourceSwitching Packaging specifications Inner circuitPackage BulkType

R6046ANZ1 Nch 600V 46A Power MOSFET DatasheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.09WID46A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead

Data Sheet10V Drive Nch MOSFET R6046FNZ Structure Dimensions (Unit : mm)Silicon N-channel MOSFET 5.5TO-3PF3.015.53.6Features1) Low on-resistance.2) Low input capacitance.2.02.03.03) High ESD.0.75(1) Gate(1) (2) (3)0.9(2) Drain Application 5.45 5.45(3) SourceSwitching Packaging specifications Inner circuitPackage BulkType

R6046FNZ1 Nch 600V 46A Power MOSFET DatasheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.098WID46A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead

R6046FNZDatasheetNch 600V 46A Power MOSFETlOutlinel TO-3PFVDSS600VRDS(on)(Max.)93m ID46A PD120W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed